Kod: 06817280
Over the last 10 years, understanding of mechanicalproperties of thin film material has been essentialfor improving life-time operations ofmicroelectromechanical systems (MEMS). Although,properties of bulk materials might be wellc ... więcej
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Over the last 10 years, understanding of mechanicalproperties of thin film material has been essentialfor improving life-time operations ofmicroelectromechanical systems (MEMS). Although,properties of bulk materials might be wellcharacterized, thin-film properties are considerablydifferent from those of the bulk. It cannot beassumed that mechanical properties using bulkspecimens will apply to the same materials when usedas a thin film. For many microelectronicthin films, material properties depend strongly onthe details of the deposition processes and thegrowth conditions on its substrate.Temperature dependence of a MEMS switch gold thinfilm membrane on the pull down voltage as thetemperature is varied from room temperature(300 K) to cryogenic temperature (10 K) isdetermined with RF MEMS shunt switches. The switchis composed of a gold coplanar waveguide structurewith a gold bridge membrane suspended above an areaof the center conductor which is covered by adielectric (BaTiO3). The gold membrane is actuatedby an electrostatic force acting between thetransmission line and the membrane when a voltage isapplied. Over the last 10 years, understanding of mechanical §properties of thin film material has been essential §for improving life-time operations of §microelectromechanical systems (MEMS). Although, §properties of bulk materials might be well §characterized, thin-film properties are considerably §different from those of the bulk. It cannot be §assumed that mechanical properties using bulk §specimens will apply to the same materials when used §as a thin film. For many microelectronic §thin films, material properties depend strongly on §the details of the deposition processes and the §growth conditions on its substrate. §Temperature dependence of a MEMS switch gold thin §film membrane on the pull down voltage as the §temperature is varied from room temperature §(300 K) to cryogenic temperature (10 K) is §determined with RF MEMS shunt switches. The switch §is composed of a gold coplanar waveguide structure §with a gold bridge membrane suspended above an area §of the center conductor which is covered by a §dielectric (BaTiO3). The gold membrane is actuated §by an electrostatic force acting between the §transmission line and the membrane when a voltage is §applied.
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