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Więcej informacji o GaN, AIN, InN and their Alloys: Volume 831

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Opis

This book discusses GaN and Related Alloys and reflects an emerging emphasis on the binaries of InN and AlN. The major thrust here is the topical development of thin-film growth, bulk growth techniques, methods to cover the full ternary and quaternary alloy ranges toward InN and AlN and their characterization; strategies for structural defect reduction and their characterization; ways to better control p-type doping and its characterization; device and defect physics, including polarization effects; physics of surfaces and interfaces; and device processing techniques. In addition, advances in MBE devices, high-power electronics, RF performance of electronics, UV emitters, high-efficiency light emitters, photo and chemical sensors, as well as new applications within the group-III nitrides, are also covered. The book captures the current status of this field and will be useful for researchers working with group-III nitrides, as well as for students who seek entry into this subject.

Szczegóły książki

Kategoria Książki po angielsku Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Pełny tytuł: GaN, AIN, InN and their Alloys: Volume 831
• Autor: Christian Wetzel, Bernard Gil, Masaaki Kuzuhara
• Język: Angielski
• Oprawa: Twarda
• Liczba stron: 784
• EAN: 9781558997790
• ISBN: 1558997792
• ID: 02060395
• Wydawca: Materials Research Society
• Waga: 1159 g
• Wymiary: 234 × 163 × 46 mm
• Data wydania: 01. July 2005

Ulubione w innej kategorii

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