Comprehensive Analysis of the Physical Properties of Advanced GAAS/Algaas Junctions / Najlacnejšie knihy
Comprehensive Analysis of the Physical Properties of Advanced GAAS/Algaas Junctions

Kod: 08287384

Comprehensive Analysis of the Physical Properties of Advanced GAAS/Algaas Junctions

Autor Hicham M Menkara

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to pr ... więcej

59.98


Dostępna u dostawcy
Wysyłamy za 15 - 20 dni
Dodaj do schowka

Zobacz książki o podobnej tematyce

Podaruj tę książkę jeszcze dziś
  1. Zamów książkę i wybierz "Wyślij jako prezent".
  2. Natychmiast wyślemy Ci bon podarunkowy, który możesz przekazać adresatowi prezentu.
  3. Książka zostanie wysłana do adresata, a Ty o nic nie musisz się martwić.

Dowiedz się więcej

Więcej informacji o Comprehensive Analysis of the Physical Properties of Advanced GAAS/Algaas Junctions

Za ten zakup dostaniesz 150 punkty

Opis

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Szczegóły książki

Kategoria Książki po angielsku Society & social sciences Education

59.98

Ulubione w innej kategorii



Osobní odběr Bratislava a 2642 dalších

Copyright ©2008-24 najlacnejsie-knihy.sk Wszelkie prawa zastrzeżonePrywatnieCookies


Konto: Logowanie
Všetky knihy sveta na jednom mieste. Navyše za skvelé ceny.

Nákupní košík ( prázdný )

Nakupte za 59,99 € a
máte doručení zdarma.

Twoja lokalizacja: