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Więcej informacji o Chemical H-Insertion into Gamma-Manganese Dioxides at Low Temperature

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Opis

Gamma Manganese Dioxides (g-MnOx) are non-stoichiometric, stable, layered materials with interstitial space to accommodate inserted ions. g-MnOx have been used as battery materials for decades. This book presents an easy to read comprehensive body of research work into the production of a series of H-inserted g-MnOx (with 1.5x2); thoroughly characterised using a range of techniques including XRD, SEM and FTIR and electrode potential measurements. The characterisation reveled many interesting structural changes in the materials caused by H-insertion. The FTIR study at low temperature presents, for the first time, tangible evidence of mobile H in one of the most defected g-MnOx. This can open avenues of new applications of MnOx as well as other layered materials of similar structures like conducting oxides.

Szczegóły książki

Kategoria Książki po angielsku Mathematics & science Chemistry

• Pełny tytuł: Chemical H-Insertion into Gamma-Manganese Dioxides at Low Temperature
• Autor: Elmouna Ahmed
• Język: Angielski
• Oprawa: Miękka
• Liczba stron: 232
• EAN: 9783639518962
• ISBN: 3639518969
• ID: 09542543
• Wydawca: Scholars' Press
• Waga: 345 g
• Wymiary: 229 × 152 × 13 mm
• Data wydania: 09. September 2015

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