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Opis

This thesis presents an in-depth theoretical analysis of charge and spin transport properties in complex forms of disordered graphene. It relies on innovative real space computational methods of the time-dependent spreading of electronic wave packets. First a universal scaling law of the elastic mean free path versus the average grain size is predicted for polycrystalline morphologies, and charge mobilities of up to 300.000 cm2/V.s are determined for 1 micron grain size, while amorphous graphene membranes are shown to behave as Anderson insulators. An unprecedented spin relaxation mechanism, unique to graphene and driven by spin/pseudospin entanglement is then reported in the presence of weak spin-orbit interaction (gold ad-atom impurities) together with the prediction of a crossover from a quantum spin Hall Effect to spin Hall effect (for thallium ad-atoms), depending on the degree of surface ad-atom segregation and the resulting island diameter.

Szczegóły książki

Kategoria Książki po angielsku Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Pełny tytuł: Charge and Spin Transport in Disordered Graphene-Based Materials
• Autor: Van Tuan Dinh
• Język: Angielski
• Oprawa: Twarda
• Liczba stron: 153
• EAN: 9783319255699
• ISBN: 331925569X
• ID: 09542175
• Wydawca: Springer International Publishing AG
• Waga: 3849 g
• Wymiary: 235 × 155 × 12 mm
• Data wydania: 23. October 2015

Ulubione w innej kategorii

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