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Więcej informacji o Carrier Lifetime Dynamics of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments

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Opis

GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE), unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence.

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Kategoria Książki po angielsku Society & social sciences Education

• Pełny tytuł: Carrier Lifetime Dynamics of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments
• Autor: Wayne E Eikenberry
• Język: Angielski
• Oprawa: Miękka
• Liczba stron: 82
• EAN: 9781288405657
• ISBN: 9781288405657
• ID: 08250217
• Wydawca: Biblioscholar
• Waga: 163 g
• Wymiary: 246 × 189 × 4 mm
• Data wydania: 01. December 2012

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