Modeling MOSFET Gain Compression And Quasi-Sat Behavior: High Voltage MOSFET Model For Lightly Doped Drains / Najlacnejšie knihy
Modeling MOSFET Gain Compression And Quasi-Sat Behavior: High Voltage MOSFET Model For Lightly Doped Drains

Code: 20554260

Modeling MOSFET Gain Compression And Quasi-Sat Behavior: High Voltage MOSFET Model For Lightly Doped Drains

by Mike Peralta

Gain compression is a reduction in incremental gain caused by nonlinearity of the transfer function of the amplifying device. Gain compression of gain is caused by non-linear characteristics of the device when run at large amplitu ... more

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Gain compression is a reduction in incremental gain caused by nonlinearity of the transfer function of the amplifying device. Gain compression of gain is caused by non-linear characteristics of the device when run at large amplitudes. As the input level is

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