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More about Kremnievye p+-n-struktury, obluchennyh vysokojenjergeticheskimi ionami

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Book synopsis

Razvitie fiziki radiacionnyh defektov v kremnii tesno svyazano s resheniem prakticheskih problem sozdaniya bystrodejstvujushhih silovyh tranzistorov i diodov, a takzhe povysheniya radiacionnoj stojkosti poluprovodnikovyh priborov. Aktual'nost' temy raboty opredelyaetsya neobhodimost'ju v novoj informacii: vo-pervyh, o vliyanii neravnomernogo raspredeleniya radiacionnyh defektov i ih skoplenij na perehodnye processy i perenos zaryada v bar'ernyh strukturah, chto mozhet byt' ispol'zovano dlya otrabotki novyh radiacionnyh tehnologij upravleniya staticheskimi i dinamicheskimi parametrami diskretnyh bipolyarnyh poluprovodnikovyh priborov; vo-vtoryh, o defektah, sozdavaemyh pri obluchenii poluprovodnikov vysokojenergeticheskimi tyazhelymi chasticami, chto vazhno dlya prognozirovaniya radiacionnoj stojkosti jelektronnyh priborov. V rabote izlozheny rezul'taty issledovanij kremnievyh p+-n-struktur, obluchennyh vysokojenergeticheskimi ionami vismuta, kriptona, xenona. Predstavleny jexperimental'nye dannye, podtverzhdajushhie vozmozhnost' ispol'zovaniya oblucheniya ionami vismuta s jenergiej 700 MjeV v tehnologii proizvodstva bystrodejstvujushhih silovyh diodov na kremnii.

Book details

• Full title: Kremnievye p+-n-struktury, obluchennyh vysokojenjergeticheskimi ionami
• Language: Russian
• Binding: Paperback
• Number of pages: 100
• EAN: 9783848491018
• ID: 16251087
• Publisher: LAP Lambert Academic Publishing
• Weight: 167 g
• Dimensions: 220 × 150 × 6 mm
• Published: 2017

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