You might also like

More about InGaP/GaAs Heterostructure Bipolar Thansistors

• Book details
• Synopsis
• Trending among others

You get 137 loyalty points

Book synopsis

Small-signal modeling and microwave noise§characterization of §InGaP/GaAs HBTs will be explored. Device physics,§analytical §extraction and numerical optimization are§incorporated to extract §small-signal equivalent circuit parameters (ECPs),§improved by §modeling interaction between contact metalizations§and hybrid §optimization of T and Pi circuit topologies.§Excellent agreement §between measured and modeled S-parameters, with limited §deviation of optimized ECPs from their initial§values, is obtained up §to 40 GHz for a wide range of bias. Combined with NF50 §measurement, frequency- and bias-dependent noise§parameters §(NPs) up to 20 GHz are extracted using polynomial§approximation of §noise parameters for intrinsic device. Facilitated by§the correction of§source mismatch in measurement, great agreement between §measured and modeled NF50, as well as acceptably§deviated §optimized fitting factors, results in a minimum NFmin§of 1.64 dB at §10 GHz for an InGaP/GaAs HBT with two 2.3 by 5.6 um2§emitters. §Study of geometry-dependent performance shows promise§of high-§speed and low noise InGaP/GaAs HBTs using narrow,§long, and at §least two-sided base contacts.

Book details

Book category Books in English Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Full title: InGaP/GaAs Heterostructure Bipolar Thansistors
• Author: Xiu Xing
• Language: English
• Binding: Paperback
• Number of pages: 108
• EAN: 9783639100549
• ISBN: 3639100549
• ID: 06819059
• Publisher: VDM Verlag
• Weight: 168 g
• Dimensions: 229 × 152 × 7 mm
• Date of publishing: 28. April 2009

Trending among others

---

---

---