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More about Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials

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Book synopsis

Abstract: It is well known that the oxidation of Silicon will inject interstitial atoms into the bulk, causing various effects such as OED and OSF. The presence of Germanium at this oxidizing interface has long been known to suppress this interstitial

Book details

Book category Books in English Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Full title: Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials
• Author: THOMAS MARTIN JR.
• Language: English
• Binding: Hardback
• Number of pages: 158
• EAN: 9780530004334
• ISBN: 053000433X
• ID: 22568706
• Publisher: Dissertation Discovery Company
• Weight: 662 g
• Dimensions: 279 × 216 × 11 mm
• Date of publishing: 31. May 2019

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