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Book synopsis

Four different application oriented III-V compound semiconductors have been selected for investigation using Positron annihilation spectroscopy (PAS) techniques. First one is Fe-doped semi-insulating Indium Phosphide. Positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation radiation (DBAR) measurements have been done in 140 MeV O(6+) ion implanted Fe-doped semi-insulating InP sample to observe irradiation induced defects formation and recovery of those defects with annealing temperature. Second, third & last samples are undoped Indium Antimonide, undoped Indium Phosphide & n-type Gallium Arsenide. PALS & DBAR measurements have been carried out in 40 MeV alpha irradiated undoped InSb, undoped InP and n-type GaAs samples to observe irradiation induced defects formation and recovery of those defects with annealing temperature respectively.

Book details

• Full title: Defects and positron states in Compound Semiconductors
• Author: Sandip Pan
• Language: English
• Binding: Paperback
• Number of pages: 144
• EAN: 9783659928383
• ID: 13709330
• Publisher: LAP Lambert Academic Publishing
• Weight: 231 g
• Dimensions: 220 × 150 × 8 mm
• Published: 2016

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