Code: 15750587
Stimulated emission depletion (STED) and lateral charge carrier motion in InGaN/GaN quantum wells are investigated. The properties of STED are experimentally studied and furthermore analyzed with an extended version of the rate eq ... more
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Stimulated emission depletion (STED) and lateral charge carrier motion in InGaN/GaN quantum wells are investigated. The properties of STED are experimentally studied and furthermore analyzed with an extended version of the rate equation system typically used for fluorescence dyes. The temperature and charge carrier density dependence of lateral charge carrier motion is studied by a confocal time of flight method and a 2D version of the ABC model.
49.52 €
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