Code: 15750587

Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion.

Name: Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion.
Brand: Fraunhofer Verlag
SKU: 15750587
Price: 49.52 EUR
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by Hans-Michael Solowan, Oliver Ambacher

Language: English
Binding: Paperback
Number of pages: 138
Publisher: Fraunhofer Verlag, 2017
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More about Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion.

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Book synopsis

Stimulated emission depletion (STED) and lateral charge carrier motion in InGaN/GaN quantum wells are investigated. The properties of STED are experimentally studied and furthermore analyzed with an extended version of the rate equation system typically used for fluorescence dyes. The temperature and charge carrier density dependence of lateral charge carrier motion is studied by a confocal time of flight method and a 2D version of the ABC model.

Book details

49.52 €

Full title: Charge carrier dynamics in InGaN quantum wells: Stimulated emission depletion and lateral charge carrier motion.
Subtitle: Dissertationsschrift
Author: Hans-Michael Solowan, Oliver Ambacher
Language: English
Binding: Paperback
Number of pages: 138
EAN: 9783839610688
ISBN: 3839610680
ID: 15750587
Publisher: Fraunhofer Verlag
Weight: 211 g
Dimensions: 210 × 147 × 17 mm
Date of publishing: 10. January 2017